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  to - 220 f plastic - encapsulate diodes mbr f 20100ct, 150ct, 200ct schottky barrier rectifier features ? schottky barrier chip ? guard ring die construction for transient protection ? low power loss,high efficiency ? high surge capability ? high current capability and low forward voltage drop ? for use in low voltage, high frequency inverters,free wheeling, and polarity protection applications maximum ratings ( t a =25 unless otherwise noted ) value symbol parameter mbr f 20100ct mbr f 20150ct mbr f 20200ct unit v rrm p eak repetitive reverse voltage v rwm working peak reverse voltage v r dc blocking voltage 100 150 200 v v r(rms) rms reverse voltage 70 105 140 v i o average rectified output current 20 a i fsm non - repetitive peak f orward surge current 8.3ms half sine wave 150 a p d power d issipation 2 w r ja thermal r esistance from j unction to a mbient 50 /w t j junction t emperat ure 125 t stg s torage t emperature - 5 5 ~+ 150 electrical characteristics (t a =25 unless otherwise specified) parameter symb ol device test conditions m in typ m ax u nit mbr f 20100ct 100 mbr f 20150ct 150 reverse voltage v (br) mbr f 20200ct i r =1 m a 200 v mbr f 20100ct v r =100v 0.15 mbr f 20150ct v r =150v 0.1 reverse current i r mbr f 20200ct v r =200v 0.1 m a mbr f 20100ct 0.85 mbr f 20150ct 0.9 forward voltage v f mbr f 20200ct i f = 10 a 0.9 v typical t otal capacitance c tot mbr f 20100ct- 20200ct v r =5v,f=1mhz 1000 pf to - 220 f 1. anode 2. cathode 3. anode tiger electronic co.,ltd b,apr,2012
0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 0.0 0.2 0.4 0.6 0.8 1.0 0.01 0.1 1 10 0 20406080100 0.1 1 10 100 0 5 10 15 20 0 200 400 600 800 forward characteristics reverse characteristics power derating curve power dissipation p d (w) ambient temperature t a ( ) 20 mbr f20100ct typical characteristics t a = 1 0 0 t a = 2 5 forward current i f (a) forward voltage v f (v) t a =100 t a =25 reverse current i r (ua) reverse voltage v r (v) t a =25 f=1mhz capacitance characteristics per diode reverse voltage v r (v) junction capacitance c j (pf) b,apr,2012


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